Induction Based Current Sensing

ABSTRACT

An integrated transformer is disclosed. The integrated transformer includes a magnetic core situated in a first layer from among multiple layers of a semiconductor layer stack, a first conductor and a second conductor from among multiple conductors, and a via. The first conductor is situated within a second layer, above the first layer, from among the multiple layers of the semiconductor layer stack. The second conductor is situated within a third layer, below the first layer, from among the multiple layers of the semiconductor layer stack. The via physically and electrically connects the first conductor and the second conductor. The via, the first conductor, and the second conductor form a primary winding of the integrated transformer. The integrated transformer additionally includes a secondary winding, wrapped around the magnetic core, situated in the first layer, the second layer, and the third layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional of U.S. patent application Ser.No. 15/067,784, filed Mar. 11, 2016, which is incorporated herein byreference in its entirety.

BACKGROUND

Electronic devices provide power to their components using a centralizedpower source, such as a battery to provide an example. Often times,voltage provided by this centralized power source fluctuates as demandfor the power changes. The electronic devices include one or morevoltage regulator circuits to ensure a constant, or substantiallyconstant, voltage is being provided to their components. Additionally,the components of the electronic devices can operate at differentvoltages. The one or more voltage regulator circuits can be used toprovide these different voltages to the components of the electronicdevices.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A illustrates a block diagram of an exemplary voltage regulatorcircuit according to an exemplary embodiment of the present disclosure;

FIG. 1B is a flowchart of exemplary operational steps of the exemplaryvoltage regulator circuit of FIG. 1A according to an exemplaryembodiment of the present disclosure;

FIG. 2A through FIG. 2C illustrate a first exemplary inductive sensingcircuit that can be implemented within the exemplary voltage regulatorcircuit of FIG. 1A according to an exemplary embodiment of the presentdisclosure;

FIG. 3A through FIG. 3C illustrate a second exemplary inductive sensingcircuit that can be implemented within the exemplary voltage regulatorcircuit of FIG. 1A according to an exemplary embodiment of the presentdisclosure;

FIG. 4 illustrates an exemplary method of fabrication of the firstexemplary inductive sensing circuit of FIG. 2 and the second exemplaryinductive sensing circuit of FIG. 3 according to an exemplary embodimentof the present disclosure;

FIG. 5A and FIG. 5B illustrate of a third exemplary inductive sensingcircuit that can be implemented within the exemplary voltage regulatorcircuit of FIG. 1A according to an exemplary embodiment of the presentdisclosure; and

FIG. 6 illustrates an exemplary method of fabrication of the thirdexemplary inductive sensing circuit of FIG. 5 according to an exemplaryembodiment of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Overview

The inductive sensing circuits of the present disclosure includemultiple conductors that carry one or more time-varying currents. Theone or more time-varying currents generate a magnetic field as they flowthrough the multiple conductors. The inductive sensing circuits sense avoltage which is induced by the magnetic field. The multiple conductorscan be configured and arranged as one or more primary windings and oneor more secondary windings of an integrated transformer. The one or moreprimary windings and the one or more secondary windings are configuredand arranged such that a change in the one or more time-varying currentsflowing through the one or more primary windings induces a voltageacross the one or more secondary windings through electromagneticinduction. The one or more primary windings and the one or moresecondary windings can be situated around a magnetic core that issituated within the one or more conductive layers and/or the one or morenon-conductive layers to form the integrated transformer. Alternatively,some of the multiple conductors can be configured and arranged to form aspiral inductor within the one or more conductive layers and/or the oneor more non-conductive layers to form an integrated inductor. The spiralinductor can optionally use a magnetic core that is situated within theone or more conductive layers and/or the one or more non-conductivelayers.

Exemplary Voltage Regulator Circuit

FIG. 1A illustrates a block diagram of an exemplary voltage regulatorcircuit according to an exemplary embodiment of the present disclosure.A voltage regulator circuit 100 adjusts an input voltage 150 to maintaina constant, or substantially constant, output voltage 152. The voltageregulator circuit 100 includes a control element 102, an inductivesensing circuit 104, an error detector 106, and a reference generator108. In an exemplary embodiment, the voltage regulator circuit 100 isdisposed onto a semiconductor substrate. The semiconductor substrate canbe a thin slice of semiconductor material, such as a silicon crystal,but can include other materials, or combinations of materials, such assapphire or any other suitable material that will be apparent to thoseskilled in the relevant art(s) without departing from the spirit andscope of the present disclosure. In this exemplary embodiment, thesemiconductor substrate includes one or more active regions for formingone or more active components of the control element 102, the inductivesensing circuit 104, the error detector 106, and/or the referencegenerator 108. Additionally, in this exemplary embodiment, one or moreinterconnections between the control element 102, the inductive sensingcircuit 104, the error detector 106, and/or the reference generator 108and/or one or more passive components of the control element 102, theinductive sensing circuit 104, the error detector 106, and/or thereference generator 108 can be formed using one or more conductivelayers. The one or more conductive layers are interdigitated with one ormore non-conductive layers. The one or more conductive layers includeone or more conductive materials such as tungsten (W), aluminum (Al),copper (Cu), gold (Au), silver (Ag), or platinum (Pt) to provide someexamples. The one or more non-conductive layers include one or morenon-conductive materials such as silicon dioxide (SiO₂) or nitride (N³⁻)to provide some examples.

The control element 102 adjusts the input voltage 150 in accordance withan error signal 154 to maintain the constant, or substantially constant,output voltage 152. In an exemplary embodiment, the control element 102operates in a similar manner as a variable resistance that continuouslyadjusts a voltage divider network to maintain the output voltage 152 toform a linear regulator, such as a shunt regulator or a series regulatorto provide some examples. The control element 102 can provide a pathfrom the input voltage 150 to ground through the variable resistance tooperate as the shunt regulator or can provide a path from the inputvoltage 150 to a load through the variable resistance to operate as theseries regulator. In another exemplary embodiment, the control element102 includes one or more active devices that continually switch betweenon and off states to maintain an average value for the output voltage152 to form a switching regulator.

The inductive sensing circuit 104 monitors the output voltage 152 toprovide a sensed output voltage 156. The inductive sensing circuit 104includes one or more integrated inductive sensing elements situatedwithin the one or more conductive layers and/or the one or morenon-conductive layers to sense the output voltage 152 to provide thesensed output voltage 156. In an exemplary embodiment, the inductivesensing element includes one or more primary windings and one or moresecondary windings. The one or more primary windings and the one or moresecondary windings are configured and arranged such that a change incurrent flowing through the one or more primary windings induces avoltage across the one or more secondary windings throughelectromagnetic induction. In this exemplary embodiment, the one or moreprimary windings and the one or more secondary windings are situatedaround a magnetic core that is situated within the one or moreconductive layers and/or the one or more non-conductive layers to forman integrated transformer for sensing the output voltage 152. In thisexemplary embodiment, the magnetic core can be configured and arrangedas one or more straight cylindrical rods, one or more “I” cores, one ormore “C” or “U” cores, one or more “E” cores, one or more rings orbeads, one or more planar cores, or any combination thereof. Themagnetic core can be implemented using one or more solid metals, such ashard or soft iron, silicon steel, mu-metal, permalloy, and supermalloyto provide some examples, one or more powdered metals, such as carbonyliron or iron powder to provide some examples, one or more ceramics, suchas ferrite to provide an example, or any combination thereof. In anotherexemplary embodiment, the one or more integrated inductive sensingelements can include a spiral inductor within the one or more conductivelayers and/or the one or more non-conductive layers to form anintegrated inductor for sensing the output voltage 152. The spiralinductor can optionally use a magnetic core that is situated within theone or more conductive layers and/or the one or more non-conductivelayers.

The error detector 106 compares the sensed output voltage 156 and areference voltage 158 to provide the error signal 154. The error signal154 can represent an analog error signal that is used to adjust thevoltage divider network to maintain the output voltage 152 or a digitalerror signal that is used to switch between the on and off states tomaintain the average value for the output voltage 152 to provide someexamples. When the error signal 154 is at a first value, such as greaterthan zero to provide an example, the reference voltage 158 is greaterthan the sensed output voltage 156. In this situation, the controlelement 102 increases the output voltage 152 in response to the errorsignal 154 to decrease the error signal 154. Otherwise, when the errorsignal 154 is at a second value, such as less than zero to provide anexample, the reference voltage 158 is less than the sensed outputvoltage 156. In this situation, the control element 102 decreases theoutput voltage 152 in response to the error signal 154 to decrease theerror signal 154.

The reference generator 108 provides the reference voltage 158. Thereference generator 108 can be implemented using any suitable circuitrythat produces a constant, or substantially constant, voltageirrespective of loading, power supply variations, and/or temperaturechanges that will be apparent to those of ordinary skill in the relevantart(s) without departing from the spirit and scope of the presentdisclosure. For example, the reference generator 108 can be implementedas a bandgap voltage based reference or a Zener diode based reference.

FIG. 1B is a flowchart of exemplary operational steps of the exemplaryvoltage regulator circuit of FIG. 1A according to an exemplaryembodiment of the present disclosure. The disclosure is not limited tothis operational description. Rather, it will be apparent to ordinarypersons skilled in the relevant art(s) that other operational controlflows are within the scope and spirit of the present disclosure. Thefollowing discussion describes an exemplary operational control flow 180of a voltage regulator circuit, such as the voltage regulator circuit100 to provide an example.

At step 182, the operational control flow 180 adjusts an input voltage,such as the input voltage 150 to provide an example, in accordance withan error signal, such as the error signal 154 to provide an example, toprovide an output voltage, such as the output voltage 152 to provide anexample. In an exemplary embodiment, the operational control flow 180operates in a similar manner as a variable resistance that continuouslyadjusts a voltage divider network to maintain the output voltage to forma linear regulator, such as a shunt regulator or a series regulator toprovide some examples. The operational control flow 180 can provide apath from the input voltage 150 to ground through the variableresistance to operate as the shunt regulator or can provide a path fromthe input voltage to a load through the variable resistance to operateas the series regulator. In another exemplary embodiment, theoperational control flow 180 includes one or more active devices thatcontinually switch between on and off states to maintain an averagevalue for the output voltage to form a switching regulator.

At step 184, the operational control flow 180 inductively senses theoutput voltage of step 182. The operational control flow 180 uses aninductive sensing circuit, such as the inductive sensing circuit 104 toprovide an example, to monitor the output voltage of step 182. Theinductive sensing circuit includes one or more integrated inductivesensing elements situated within the one or more conductive layersand/or the one or more non-conductive layers to sense the output voltageof step 182. In an exemplary embodiment, the inductive sensing elementincludes one or more primary windings and one or more secondarywindings. The one or more primary windings and the one or more secondarywindings are configured and arranged such that a change in currentflowing through the one or more primary windings induces a voltageacross the one or more secondary windings through electromagneticinduction. In this exemplary embodiment, the one or more primarywindings and the one or more secondary windings are situated around amagnetic core that is situated within the one or more conductive layersand/or the one or more non-conductive layers to form an integratedtransformer for sensing the output voltage of step 182. In thisexemplary embodiment, the magnetic core can be configured and arrangedas one or more straight cylindrical rods, one or more “I” cores, one ormore “C” or “U” cores, one or more “E” cores, one or more rings orbeads, one or more planar cores, or any combination thereof. Themagnetic core can be implemented using one or more solid metals, such ashard or soft iron, silicon steel, mu-metal, permalloy, and supermalloyto provide some examples, one or more powdered metals, such as carbonyliron or iron powder to provide some examples, one or more ceramics, suchas ferrite to provide an example, or any combination thereof. In anotherexemplary embodiment, the one or more integrated inductive sensingelements can include a spiral inductor within the one or more conductivelayers and/or the one or more non-conductive layers to form anintegrated inductor for sensing the output voltage of step 182. Thespiral inductor can optionally use a magnetic core that is situatedwithin the one or more conductive layers and/or the one or morenon-conductive layers.

At step 186, the operational control flow 180 compares the sensed outputvoltage of step 184 with a reference voltage, such as the referencevoltage 158 to provide an example, to provide the error signal of step182. The operational control flow 180 compares the sensed output voltageof step 184 and the reference voltage to provide the error signal ofstep 182. The error signal of step 182 can represent an analog errorsignal that is used to adjust the voltage divider network to maintainthe output voltage of step 182 or a digital error signal that is used toswitch between the on and off states to maintain the average value forthe output voltage of step 182 to provide some examples. When the errorsignal of step 182 is at a first value, such as greater than zero toprovide an example, the reference voltage is greater than the sensedoutput voltage of step 184. In this situation, the operational controlflow 180 increases the output voltage of step 182 in response to theerror signal of step 182 to decrease the error signal of step 182.Otherwise, when the error signal of step 182 is at a second value, suchas less than zero to provide an example, the reference voltage is lessthan the sensed output voltage of step 184. In this situation, theoperational control flow 180 decreases the output voltage of step 182 inresponse to the error signal of step 182 to decrease the error signal ofstep 182.

First Exemplary Inductive Sensing Circuit

FIG. 2A through FIG. 2C illustrate a first exemplary inductive sensingcircuit that can be implemented within the exemplary voltage regulatorcircuit of FIG. 1A according to an exemplary embodiment of the presentdisclosure. FIG. 2A through FIG. 2C illustrate a top view 202, a rightside view 204, and a front view 206, respectively, of an inductivesensing circuit. The inductive sensing circuit can represent anexemplary embodiment of the inductive sensing circuit 104. As such, theinductive sensing circuit monitors the output voltage 152 to provide thesensed output voltage 156.

The inductive sensing circuit includes a magnetic core 208. Asillustrated in FIG. 2A, the magnetic core 208 is implemented using two“C” or “U” cores. However, those of ordinary skill in the relevantart(s) will recognize the magnetic core 208 can be implemented usingother arrangements such as one or more “I” cores, one or more “E” cores,one or more rings or beads, or any combination thereof without departingfrom the spirit and scope of the present disclosure. The magnetic core208 can be implemented using one or more solid metals, such as hard orsoft iron, silicon steel, mu-metal, permalloy, and supermalloy toprovide some examples, one or more powdered metals, such as carbonyliron or iron powder to provide some examples, one or more ceramics, suchas ferrite to provide an example, or any combination thereof. However,those of ordinary skill in the relevant art(s) will recognize themagnetic core 208 can be implemented using any suitable magnetic orferromagnetic material without departing from the spirit and scope ofthe present disclosure.

As additionally illustrated in FIG. 2A through FIG. 2C, one or more topconductors 210.1 through 210.n are situated above the magnetic core 208and one or more bottom conductors 212.1 through 212.n are situated belowthe magnetic core 208. The one or more top conductors 210.1 through210.n are physically and electrically connected to the one or morebottom conductors 212.1 through 212.n using vias 214.1 through 214.n. Asillustrated in the top view 202 of FIG. 2A, each of the vias 214.1through 214.n physically and electrically connect a corresponding topconductor from among the one or more top conductors 210.1 through 210.nand a corresponding bottom conductor from among the one or more bottomconductors 212.1 through 212.n. In an exemplary embodiment, the vias214.1 through 214.n are situated in a center, or approximate center, ofthe magnetic core 208; however, other arrangements for the vias 214.1through 214.n are possible as will be recognized by those of ordinaryskill in the relevant art(s) without departing from the spirit and scopeof the present disclosure. As additionally illustrated in the top view202 of FIG. 2A, the one or more top conductors 210.1 through 210.n andthe one or more bottom conductors 212.1 through 212.n carry a timevarying current, such as the output voltage 152 of the voltage regulatorcircuit 100 to provide an example. In an exemplary embodiment, the oneor more top conductors 210.1 through 210.n and the one or more bottomconductors 212.1 through 212.n include a single top conductor and asingle bottom conductor. However, one or more physical characteristics,such as line width or line thickness to provide some examples, of asingle top conductor from among the one or more top conductors 210.1through 210.n and a single bottom conductor from among the one or morebottom conductors 212.1 through 212.n can prevent the single topconductor and the single bottom conductor from carrying the time varyingcurrent. In another exemplary embodiment, the one or more top conductors210.1 through 210.n and the one or more bottom conductors 212.1 through212.n include multiple top conductors and multiple bottom conductors toseparate the time varying current into multiple time varying currents.

The one or more top conductors 210.1 through 210.n and the one or morebottom conductors 212.1 through 212.n form a primary winding 216 of anintegrated transformer that is integrated within a semiconductorsubstrate. As further illustrated in FIG. 2A through FIG. 2C, aninductive sensing element situated around the magnetic core 208 forms asecondary winding 218 of the integrated transformer. The primary winding216 and the secondary winding 218 is configured and arranged such that achange in the time varying current flowing through the primary winding216 induces a voltage, such as sensed output voltage 156 of the voltageregulator circuit 100 to provide an example, across the secondarywinding 218 through electromagnetic induction. In general, the inducedvoltage can be approximated as:

$\begin{matrix}{V_{2} = {\frac{N_{2}}{N_{1}}{V_{1}.}}} & (1)\end{matrix}$

where V₂ and V₁ represent the induced voltage across the secondarywinding 218 and a voltage potential across the primary winding 216,respectively, and N₁ and N₂ represent numbers of turns of the primarywinding 216 and the secondary winding 218, respectively. The numbers ofturns of the primary winding 216 and the secondary winding 218 representthe number of times the primary winding 216 and the secondary winding218, respectively, wrap around the magnetic core 208. In an exemplaryembodiment, a ratio of N₂ and N₁ is greater than one to compensate forhysteresis losses and/or eddy current in the magnetic core 208.

As illustrated in the right side view 204 of FIG. 2B and the front view206 of FIG. 2C, the one or more bottom conductors 212.1 through 212.nare situated within a first layer 220 of a semiconductor layer stack,the magnetic core 208 is situated within a second layer 222 of thesemiconductor layer stack, and the one or more top conductors 210.1through 210.n are situated within a third layer 224 of the semiconductorlayer stack. In an exemplary embodiment, the first layer 220 and thethird layer 224 are conductive layers of the semiconductor layer stackand the second layer 222 is a non-conductive layer of the semiconductorlayer stack. In another exemplary embodiment, the first layer 220 andthe third layer 224 are non-conductive layers of the semiconductor layerstack and the second layer 222 is a conductive layer of thesemiconductor layer stack. Although the magnetic core 208 is illustratedas being situated within the second layer 222 of the semiconductor layerstack, those of ordinary skill in the relevant art(s) will recognize themagnetic core 208 can be formed in any combination of conductive layersand non-conductive layers without departing from the spirit and scope ofthe present disclosure.

Second Exemplary Inductive Sensing Circuit

FIG. 3A through FIG. 3C illustrate a second exemplary inductive sensingcircuit that can be implemented within the exemplary voltage regulatorcircuit of FIG. 1A according to an exemplary embodiment of the presentdisclosure. FIG. 3A through FIG. 3C illustrate a top view 302, a rightside view 304, and a front view 306, respectively of an inductivesensing circuit. The inductive sensing circuit can represent anexemplary embodiment of the inductive sensing circuit 104. As such, theinductive sensing circuit monitors the output voltage 152 to provide thesensed output voltage 156.

The inductive sensing circuit includes a magnetic core 308. Asillustrated in FIG. 3A through FIG. 3C, the magnetic core 308 isimplemented using one or more planar cores. However, those of ordinaryskill in the relevant art(s) will recognize the magnetic core 308 can beimplemented using other arrangements as one or more straight cylindricalrods, one or more rings or beads, one or more planar cores, or anycombination thereof without departing from the spirit and scope of thepresent disclosure. The magnetic core 308 can be implemented using oneor more solid metals, such as hard or soft iron, silicon steel,mu-metal, permalloy, and supermalloy to provide some examples, one ormore powdered metals, such as carbonyl iron or iron powder to providesome examples, one or more ceramics, such as ferrite to provide anexample, or any combination thereof. However, those of ordinary skill inthe relevant art(s) will recognize the magnetic core 308 can beimplemented using any suitable magnetic or ferromagnetic materialwithout departing from the spirit and scope of the present disclosure.

As additionally illustrated in FIG. 3A through FIG. 3C, one or more topconductors 310.1 through 310.n are situated above the magnetic core 308and one or more bottom conductors 312.1 through 312.n are situated belowthe magnetic core 308. In an exemplary embodiment, the one or more topconductors 310.1 through 310.n and the one or more bottom conductors312.1 through 312.n are arranged substantially parallel to each otherand substantially orthogonal to the magnetic core. As illustrated in thetop view 302 of FIG. 3A, the one or more top conductors 310.1 through310.n and the one or more bottom conductors 312.1 through 312.n carrytime varying currents, such as the output voltage 152 of the voltageregulator circuit 100 to provide an example. The time varying currentcarried by the one or more top conductors 310.1 through 310.n flows in adirection that is opposite to a direction that the time varying currentcarried by the one or more bottom conductors 312.1 through 312.n isflowing. As such, the time varying current carried by the one or moretop conductors 310.1 through 310.n is approximately 180 degrees out ofphase with the time varying current carried by the one or more bottomconductors 312.1 through 312.n. For example, the one or more topconductors 310.1 through 310.n can carry the output voltage 152 to aload attached to the voltage regulator circuit 100 and the one or morebottom conductors 312.1 through 312.n can be configured to provide areturn path for the output voltage 152 from the load. In an exemplaryembodiment, the one or more top conductors 310.1 through 310.n and theone or more bottom conductors 312.1 through 312.n include a single topconductor and a single bottom conductor. However, one or more physicalcharacteristics, such as line width or line thickness to provide someexamples, of a single top conductor from among the one or more topconductors 310.1 through 310.n and a single bottom conductor from amongthe one or more bottom conductors 312.1 through 312.n can prevent thesingle top conductor and the single bottom conductor from carrying thetime varying currents. In another exemplary embodiment, the one or moretop conductors 310.1 through 310.n and the one or more bottom conductors312.1 through 312.n include multiple top conductors and multiple bottomconductors to separate the time varying currents into multiple timevarying currents.

The time varying currents carried one or more top conductors 310.1through 310.n and the one or more bottom conductors 312.1 through 312.ngenerate a magnetic field. Because, the time varying current carried bythe one or more top conductors 310.1 through 310.n is approximately 180degrees out of phase with the time varying current carried by the one ormore bottom conductors 312.1 through 312.n, both of these time varyingcurrents contribute to the magnetic field. The one or more topconductors 310.1 through 310.n and the one or more bottom conductors312.1 through 312.n form a primary winding 316 of an integratedtransformer that is integrated within a semiconductor substrate. Asfurther illustrated in the top view 302 of FIG. 3A and the front view306 of FIG. 3C, an inductive sensing element situated around themagnetic core 308 forms a secondary winding 318 of the integratedtransformer. The primary winding 316 and the secondary winding 318 areconfigured and arranged such that a change in the time varying currentflowing through the primary winding 316 induces a voltage, such assensed output voltage 156 of the voltage regulator circuit 100 toprovide an example, across the secondary winding 318 throughelectromagnetic induction.

As illustrated in the right side view 304 of FIG. 3B and the front view306 of FIG. 3C, the one or more bottom conductors 312.1 through 312.nare situated within a first layer 320 of a semiconductor layer stack,the magnetic core 308 is situated within a second layer 322 of thesemiconductor layer stack, and the one or more top conductors 310.1through 310.n are situated within a third layer 324 of the semiconductorlayer stack. In an exemplary embodiment, the first layer 320 and thethird layer 324 represent conductive layers of the semiconductor layerstack and the second layer 322 represents a non-conductive layer of thesemiconductor layer stack. In another exemplary embodiment, the firstlayer 320 and the third layer 324 represent non-conductive layers of thesemiconductor layer stack and the second layer 322 represents aconductive layer of the semiconductor layer stack. Although the magneticcore 308 is illustrated as being situated within the second layer 322 ofthe semiconductor layer stack, those of ordinary skill in the relevantart(s) will recognize the magnetic core 308 can be formed in anycombination of conductive layers and non-conductive layers withoutdeparting from the spirit and scope of the present disclosure.

Exemplary Fabrication of the First Exemplary Inductive Sensing Circuitand the Second Exemplary Inductive Sensing Circuit.

FIG. 4 illustrates an exemplary method of fabrication of the firstexemplary inductive sensing circuit of FIG. 2A through FIG. 2C and thesecond exemplary inductive sensing circuit of FIG. 3A through FIG. 3Caccording to an exemplary embodiment of the present disclosure. Theexemplary method of fabrication represents a multiple-step sequence ofphotolithographic and chemical processing steps to create an inductivesensing circuit, such as the inductive sensing circuit of FIG. 2Athrough FIG. 2C or the inductive sensing circuit of FIG. 3A through FIG.3C to provide some examples. The multiple-step sequence ofphotolithographic and chemical processing steps can include deposition,removal, and/or patterning to provide some examples. The depositionrepresents a processing step of the exemplary method of fabricationwhere material is grown, coated, or otherwise transferred. The removalrepresents another processing step of the exemplary method offabrication where material is removed. The patterning represents afurther processing step exemplary method of fabrication where materialis shaped or altered.

At step 402, the exemplary method of fabrication forms one or morebottom conductors, such as the one or more bottom conductors 212.1through 212.n or the one or more bottom conductors 312.1 through 312.nto provide some examples, within a first layer of a semiconductor layerstack. In an exemplary embodiment, the first layer of the semiconductorlayer stack represents a conductive layer. In this exemplary embodiment,the exemplary method of fabrication performs a deposition process withinthe conductive layer to deposit one or more conductive materials withinthe conductive layer. The one or more conductive materials can includetungsten (W), aluminum (Al), copper (Cu), gold (Au), silver (Ag), orplatinum (Pt) to provide some examples. The exemplary method offabrication performs a patterning process on the one or more conductivematerials within the conductive layer to shape the one or moreconductive materials to form the one or more bottom conductors withinthe first layer of the semiconductor layer stack. In another exemplaryembodiment, the first layer of the semiconductor layer stack representsa non-conductive layer. In this other exemplary embodiment, theexemplary method of fabrication performs a deposition process within thenon-conductive layer to grow one or more non-conductive materials. Theone or more non-conductive materials can include silicon dioxide (SiO₂)or nitride (N³⁻) to provide some examples. Next, the exemplary method offabrication performs a removal process on the non-conductive layer toremove some of the one or more non-conductive materials to from one ormore trenches. Thereafter, the exemplary method of fabrication performsa deposition process within the non-conductive layer to deposit the oneor more conductive materials within the one or more trenches to form theone or more bottom conductors within the first layer of thesemiconductor layer stack.

At step 404, the exemplary method of fabrication forms a magnetic core,such as the magnetic core 208 or the magnetic core 308 to provide someexamples, within a second layer of the semiconductor layer stack. In anexemplary embodiment, the second layer of the semiconductor layer stackrepresents one or more conductive layers and/or one or morenon-conductive layers. For each conductive layer, the exemplary methodof fabrication performs a deposition process within the conductive layerto deposit one or more magnetic or ferromagnetic materials, such assolid metals, such as hard or soft iron, silicon steel, mu-metal,permalloy, and supermalloy to provide some examples, one or morepowdered metals, such as carbonyl iron or iron powder to provide someexamples, one or more ceramics, such as ferrite to provide an example,or any combination thereof within the one or more trenches to form themagnetic core within the second layer of the semiconductor layer stack.The exemplary method of fabrication performs a patterning process on theone or more magnetic or ferromagnetic materials within the conductivelayer to shape the one or more magnetic or ferromagnetic materials toform the magnetic core or a portion thereof. For each non-conductivelayer, the exemplary method of fabrication performs a deposition processwithin the non-conductive layer to grow the one or more non-conductivematerials. Next, the exemplary method of fabrication performs a removalprocess on the non-conductive layer to remove some of the one or morenon-conductive materials to from one or more trenches. Thereafter, theexemplary method of fabrication performs a deposition process within thenon-conductive layer to deposit the one or more magnetic orferromagnetic materials within the one or more trenches to form themagnetic core or a portion thereof. In an exemplary embodiment, thenon-conductive material patterned to the magnetic core can be formedbetween conductive layers and/or non-conductive layer to providelaminated core for the magnetic core to reduce eddy currents within themagnetic core.

At step 406, the exemplary method of fabrication forms a couplingelement, such as the secondary winding 218 or the inductive sensingelement 318 to provide some examples, within the semiconductor layerstack. The coupling element is formed within the first layer, the secondlayer, and/or the third layer of the semiconductor layer stack. Theexemplary method of fabrication forms a first portion of the couplingelement along with the one or more bottom conductors of step 402, asecond portion of the coupling element along with the magnetic core ofstep 404 using the one or more conductive materials in place of the oneor more magnetic or ferromagnetic materials, and a third portion of thecoupling element along with one or more tops conductors of step 408. Thefirst portion, the second portion, and the third portion are physicallyand electrically connected to form the coupling element.

At step 408, the exemplary method of fabrication forms one or more topconductors, such as the one or more top conductors 210.1 through 210.nor the one or more top conductors 310.1 through 310.n to provide someexamples, within a third layer of the semiconductor layer stack. In anexemplary embodiment, the third layer of the semiconductor layer stackrepresents a conductive layer. In this exemplary embodiment, theexemplary method of fabrication performs a deposition process within theconductive layer to deposit the one or more conductive materials withinthe conductive layer. The exemplary method of fabrication performs apatterning process on the one or more conductive materials within theconductive layer to shape the one or more conductive materials to formthe one or more top conductors within the third layer of thesemiconductor layer stack. In another exemplary embodiment, the thirdlayer of the semiconductor layer stack represents a non-conductivelayer. In this other exemplary embodiment, the exemplary method offabrication performs a deposition process within the non-conductivelayer to grow the one or more non-conductive materials. Next, theexemplary method of fabrication performs a removal process on thenon-conductive layer to remove some of the one or more non-conductivematerials from one or more trenches. Thereafter, the exemplary method offabrication performs a deposition process within the non-conductivelayer to deposit the one or more conductive materials within the one ormore trenches to form the one or more top conductors within the thirdlayer of the semiconductor layer stack. Optionally, the exemplary methodof fabrication can physically and electrically connect the one or moretop conductors to the one or more bottom conductors of step 402 usingone or more vias. In a further exemplary embodiment, the one or more topconductors can be formed using bond wire or ball bond instead of thethird layer of the semiconductor layer.

Third Exemplary Inductive Sensing Circuit

FIG. 5A and FIG. 5B illustrate a third exemplary inductive sensingcircuit that can be implemented within the exemplary voltage regulatorcircuit of FIG. 1A according to an exemplary embodiment of the presentdisclosure. FIG. 5A and FIG. 5B illustrate a top view 502 and a frontview 504, respectively, of an inductive sensing circuit. The inductivesensing circuit can represent an exemplary embodiment of the inductivesensing circuit 104. As such, the inductive sensing circuit monitors theoutput voltage 152 to provide the sensed output voltage 156.

As additionally illustrated in FIG. 5A and FIG. 5B, one or more firstconductors 510.1 through 510.n and one or more second conductors 512.1through 512.n are situated within a layer 522 of the semiconductor layerstack. As illustrated in the top view 502 of FIG. 5A, the one or morefirst conductors 510.1 through 510.n and the one or more secondconductors 512.1 through 512.n carry time varying currents, such as theoutput voltage 152 of the voltage regulator circuit 100 to provide anexample. The time varying current carried by the one or more firstconductors 510.1 through 510.n flows in a direction that is opposite toa direction that the time varying current carried by the one or moresecond conductors 512.1 through 512.n is flowing. As such, the timevarying current carried by the one or more first conductors 510.1through 510.n is approximately 180 degrees out of phase with the timevarying current carried by the one or more second conductors 512.1through 512.n. For example, the one or more first conductors 510.1through 510.n can carry the output voltage 152 to a load attached to thevoltage regulator circuit 100 and the one or more second conductors512.1 through 512.n can be configured to provide a return path for theoutput voltage 152 from the load. In an exemplary embodiment, the one ormore first conductors 510.1 through 510.n and the one or more secondconductors 512.1 through 512.n include a single first conductor and asingle second conductor. However, one or more physical characteristics,such as line width or line thickness to provide some examples, of asingle first conductor from among the one or more first conductors 510.1through 510.n and a single second conductor from among the one or moresecond conductors 512.1 through 512.n can prevent the single firstconductor and the single second conductor from carrying the time varyingcurrents. In another exemplary embodiment, the one or more firstconductors 510.1 through 510.n and the one or more second conductors512.1 through 512.n include multiple first conductors and multiplesecond conductors to separate the time varying currents into multipletime varying currents.

The time varying currents carried by one or more first conductors 510.1through 510.n and the one or more second conductors 512.1 through 512.ngenerate a magnetic field. Because, the time varying current carried bythe one or more first conductors 510.1 through 510.n is approximately180 degrees out of phase with the time varying current carried by theone or more second conductors 512.1 through 512.n, both of these timevarying currents contribute to the magnetic field. As furtherillustrated in FIG. 5A and FIG. 5B, an inductive sensing element, suchas a spiral inductor 518, is situated within the layer 522 of thesemiconductor layer stack. The magnetic field generated by the timevarying currents induces a voltage, such as sensed output voltage 156 ofthe voltage regulator circuit 100 to provide an example, within theinductive sensing element, such as across terminals 508.1 and 508.2 ofthe spiral inductor 518. The spiral inductor 518 is formed using aconductive material that emanates from the first terminal 508.1 andprogresses farther away from the first terminal 508.1 as the conductivematerial revolves around the first terminal 508.1 to the second terminal508.2. Although the spiral inductor 518 is illustrated as beingrectangular in shape in FIG. 5A, this is for illustrative purposes only.Those of ordinary skill in the relevant art(s) will recognize the spiralinductor 518 assume other shapes, such as a regular geometric structure,such as a regular circle, a regular ellipse, a regular polygon, anirregular geometric structure such as an irregular polygon, or anycombination thereof to provide some examples, without departing from thespirit and scope of the present disclosure.

As illustrated in the front view 504 of FIG. 5B, the one or more firstconductors 510.1 through 510.n, the one or more second conductors 512.1through 512.n, and the spiral inductor 518 are situated within the layer522 of the semiconductor layer stack. The layer 522 of the semiconductorlayer stack can represent a conductive layer and/or a non-conductivelayer of the semiconductor layer stack. In an exemplary embodiment, theone or more first conductors 510.1 through 510.n and the one or moresecond conductors 512.1 through 512.n can be situated within differentlayers of the semiconductor layer stack. For example, the one or morefirst conductors 510.1 through 510.n can be situated with a firstconductive layer of the semiconductor layer stack and the secondconductors 512.1 through 512.n can be situated with a second conductivelayer of the semiconductor layer stack. In another exemplary embodiment,the turns of the spiral inductor 518 can be situated within differentlayers of the semiconductor layer stack.

Exemplary Fabrication of the Third Exemplary Inductive Sensing Circuit

FIG. 6 illustrates an exemplary method of fabrication of the thirdexemplary inductive sensing circuit of FIG. 5 according to an exemplaryembodiment of the present disclosure. The exemplary method offabrication represents a multiple-step sequence of photolithographic andchemical processing steps to create an inductive sensing circuit, suchas the inductive sensing circuit of FIG. 5 to provide an example. Themultiple-step sequence of photolithographic and chemical processingsteps can include deposition, removal, and/or patterning to provide someexamples. The deposition represents a processing step of the exemplarymethod of fabrication where material is grown, coated, or otherwisetransferred. The removal represents another processing step of theexemplary method of fabrication where material is removed. Thepatterning represents a further processing step exemplary method offabrication where material is shaped or altered.

At step 602, the exemplary method of fabrication forms one or more firstconductors, such as the one or more first conductors 510.1 through 510.nto provide an examples, within a conductive layer and/or non-conductivelayer of a semiconductor layer stack. In an exemplary embodiment, theconductive layer and/or non-conductive layer of the semiconductor layerstack represents a conductive layer. In this exemplary embodiment, theexemplary method of fabrication performs a deposition process within theconductive layer to deposit one or more conductive materials within theconductive layer. The one or more conductive materials can includetungsten (W), aluminum (Al), copper (Cu), gold (Au), silver (Ag), orplatinum (Pt) to provide some examples. The exemplary method offabrication performs a patterning process on the one or more conductivematerials within the conductive layer to shape the one or moreconductive materials to form the one or more first conductors theconductive layer and/or non-conductive layer of the semiconductor layerstack. In another exemplary embodiment, the conductive layer and/ornon-conductive layer of the semiconductor layer stack represents anon-conductive layer. In this other exemplary embodiment, the exemplarymethod of fabrication performs a deposition process within thenon-conductive layer to grow one or more non-conductive materials. Theone or more non-conductive materials can include silicon dioxide (SiO₂)or nitride (N³⁻) to provide some examples. Next, the exemplary method offabrication performs a removal process on the non-conductive layer toremove some of the one or more non-conductive materials to from one ormore trenches. Thereafter, the exemplary method of fabrication performsa deposition process within the non-conductive layer to deposit the oneor more conductive materials within the one or more trenches to form theone or more first conductors within the conductive layer and/ornon-conductive layer of the semiconductor layer stack.

At step 604, the exemplary method of fabrication forms a spiralinductor, such as the spiral inductor 518 to provide an example, withinthe semiconductor layer stack. The spiral inductor is formed within theconductive layer and/or non-conductive layer of the semiconductor layerstack of step 602. The spiral inductor can be rectangular, a regulargeometric structure, such as a regular circle, a regular ellipse, aregular polygon, an irregular geometric structure such as an irregularpolygon, or any combination thereof to provide some examples. From theexemplary embodiment above, the conductive layer and/or non-conductivelayer of the semiconductor layer stack of step 602 represents aconductive layer. In this exemplary embodiment, the exemplary method offabrication performs a deposition process within the conductive layer todeposit one or more conductive materials within the conductive layer.The one or more conductive materials can include tungsten (W), aluminum(Al), copper (Cu), gold (Au), silver (Ag), or platinum (Pt) to providesome examples. The exemplary method of fabrication performs a patterningprocess on the one or more conductive materials within the conductivelayer to shape the one or more conductive materials to form the spiralinductor within the conductive layer and/or non-conductive layer of thesemiconductor layer stack of step 602. From the other exemplaryembodiment above, the conductive layer and/or non-conductive layer ofthe semiconductor layer stack of step 602 represents a non-conductivelayer. In this other exemplary embodiment, the exemplary method offabrication performs a deposition process within the non-conductivelayer to grow one or more non-conductive materials. The one or morenon-conductive materials can include silicon dioxide (SiO₂) or nitride(N³⁻) to provide some examples. Next, the exemplary method offabrication performs a removal process on the non-conductive layer toremove some of the one or more non-conductive materials to from one ormore trenches. Thereafter, the exemplary method of fabrication performsa deposition process within the non-conductive layer to deposit the oneor more conductive materials within the one or more trenches to form thespiral inductor within the conductive layer and/or non-conductive layerof the semiconductor layer stack of step 602.

At step 606, the exemplary method of fabrication forms one or moresecond conductors, such as the one or more second conductors 512.1through 512.n to provide an example, within the semiconductor layerstack. The one or more second conductors are formed within theconductive layer and/or non-conductive layer of the semiconductor layerstack of step 602. From the exemplary embodiment above, the conductivelayer and/or non-conductive layer of the semiconductor layer stack ofstep 602 represents a conductive layer. In this exemplary embodiment,the exemplary method of fabrication performs a deposition process withinthe conductive layer to deposit one or more conductive materials withinthe conductive layer. The one or more conductive materials can includetungsten (W), aluminum (Al), copper (Cu), gold (Au), silver (Ag), orplatinum (Pt) to provide some examples. The exemplary method offabrication performs a patterning process on the one or more conductivematerials within the conductive layer to shape the one or moreconductive materials to form the one or more second conductors withinthe conductive layer and/or non-conductive layer of the semiconductorlayer stack of step 602. From the other exemplary embodiment above, theconductive layer and/or non-conductive layer of the semiconductor layerstack of step 602 represents a non-conductive layer. In this otherexemplary embodiment, the exemplary method of fabrication performs adeposition process within the non-conductive layer to grow one or morenon-conductive materials. The one or more non-conductive materials caninclude silicon dioxide (SiO₂) or nitride (N³⁻) to provide someexamples. Next, the exemplary method of fabrication performs a removalprocess on the non-conductive layer to remove some of the one or morenon-conductive materials to from one or more trenches. Thereafter, theexemplary method of fabrication performs a deposition process within thenon-conductive layer to deposit the one or more conductive materialswithin the one or more trenches to form the one or more secondconductors within the conductive layer and/or non-conductive layer ofthe semiconductor layer stack of step 602.

The foregoing Detailed Description discloses an integrated transformer.The integrated transformer includes a magnetic core situated in a firstlayer from among multiple layers of a semiconductor layer stack, a firstconductor and a second conductor from among multiple conductors, and avia. The first conductor is situated within a second layer, above thefirst layer, from among the multiple layers of the semiconductor layerstack. The second conductor is situated within a third layer, below thefirst layer, from among the multiple layers of the semiconductor layerstack. The via physically and electrically connects the first conductorand the second conductor. The via, the first conductor, and the secondconductor form a primary winding of the integrated transformer. Theintegrated transformer additionally includes a secondary winding,wrapped around the magnetic core, situated in the first layer, thesecond layer, and the third layer

The integrated transformer can be fabricated by forming a firstconductor within a first layer of a semiconductor layer stack, amagnetic core within a second layer of the semiconductor stack, and asecond conductor within a third layer of the semiconductor stack. Thefirst conductor and the second conductor form a primary winding of theintegrated transformer. A coupling element is formed to wrap around themagnetic core to form a secondary winding of the integrated transformer.

The integrated transformer can be implemented within a voltage regulatorcircuit. The voltage regulator circuit includes a control element, aninductive sensing circuit, and an error detector. The control elementadjusts an input voltage in accordance with an error signal to maintaina substantially constant output voltage. The inductive sensing circuitincludes an integrated transformer and monitors the substantiallyconstant output voltage to provide a sensed output voltage. Theintegrated transformer includes a magnetic core, multiple conductorsthat form a primary winding of the integrated transformer, and asecondary winding of the integrated transformer wrapped around themagnetic core. A first group of conductors from among the multipleconductors is situated above the magnetic core and a second group ofconductors from among the multiple conductors is situated below themagnetic core. The error detector compares the sensed output voltage anda reference voltage to provide the error signal.

The foregoing disclosure outlines features of several embodiments sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art should also realize thatsuch equivalent constructions do not depart from the spirit and scope ofthe present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A method for fabricating an integratedtransformer, the method comprising: forming a first plurality ofconductors within a first layer of a semiconductor layer stack; forminga magnetic core within a plurality of second layers of the semiconductorstack; forming a second plurality of conductors within a third layer ofthe semiconductor stack, the first plurality of conductors, and thesecond plurality of conductors forming a primary winding of theintegrated transformer; and forming a coupling element to wrap aroundthe magnetic core to form a secondary winding of the integratedtransformer.
 2. The method of claim 1, wherein the forming the firstplurality of conductors comprises: depositing one or more conductivematerials within the first layer; and patterning the one or moreconductive materials to form the first plurality of conductors.
 3. Themethod of claim 1, wherein the forming the first plurality of conductorscomprises: growing one or more non-conductive materials within the firstlayer; forming one or more trenches in the one or more non-conductivematerials; and depositing one or more conductive materials within theone or more trenches to form the first plurality of conductors.
 4. Themethod of claim 1, wherein the first layer is below the plurality ofsecond layers in the semiconductor layer stack, and wherein theplurality of second layers is below the third layer in the semiconductorlayer stack.
 5. The method of claim 1, wherein the forming the magneticcore comprises: depositing one or more magnetic or ferromagneticmaterials within a conductive layer from among the plurality of secondlayers; patterning the one or more conductive materials to form a firstportion of the magnetic core; growing one or more non-conductivematerials within a non-conductive layer from among the plurality ofsecond layers; forming one or more trenches in the one or morenon-conductive materials; and depositing the one or more conductivematerials within the one or more trenches to form a second portion ofthe magnetic core.
 6. The method of claim 5, wherein the first portionof the magnetic core is physically and electrically connected to thesecond portion of the magnetic core.
 7. The method of claim 5, whereinthe forming the magnetic core further comprises: growing the one or morenon-conductive materials between the first portion of the magnetic coreand the second portion of the magnetic core to form a laminated core forthe magnetic core.
 8. The method of claim 1, wherein the forming thecoupling element comprises: simultaneously forming a first portion ofthe coupling element and the first plurality of conductors;simultaneously forming a second portion of the coupling element and themagnetic core, the first portion of the coupling element and the secondportion of the coupling element being physically and electricallyconnected; and simultaneously forming a third portion of the couplingelement and the second plurality of conductors, the second portion ofthe coupling element and the third portion of the coupling element beingphysically and electrically connected to form the coupling element. 9.The method of claim 1, further comprising: forming a plurality of viasto physically and electrically connect the first plurality of conductorsand the second plurality of conductors, the plurality of vias, the firstplurality of conductors, and the second plurality of conductors formingthe primary winding of the integrated transformer.
 10. A method forfabricating an integrated transformer, the method comprising: forming amagnetic core within a plurality of first layers of a semiconductorstack; forming a first plurality of conductors along a first directionwithin a second layer of the semiconductor layer stack, the firstplurality of conductors being situated below a first side of themagnetic core; forming a second plurality of conductors along the firstdirection within a third layer of the semiconductor layer stack, thesecond plurality of conductors being situated above a second side of themagnetic core; physically and electrically connecting the firstplurality of conductors and the second plurality of conductors to form aprimary winding of the integrated transformer; and forming a couplingelement along a second direction, orthogonal to the first direction, towrap around the magnetic core to form a secondary winding of theintegrated transformer.
 11. The method of claim 10, wherein the formingthe magnetic core comprises: depositing one or more magnetic orferromagnetic materials within a conductive layer from among theplurality of first layers; patterning the one or more conductivematerials to form a first portion of the magnetic core; growing one ormore non-conductive materials within a non-conductive layer from amongthe plurality of first layers; forming one or more trenches in the oneor more non-conductive materials; and depositing the one or moreconductive materials within the one or more trenches to form a secondportion of the magnetic core.
 12. The method of claim 11, wherein thefirst portion of the magnetic core is physically and electricallyconnected to the second portion of the magnetic core.
 13. The method ofclaim 11, wherein the forming the magnetic core further comprises:growing the one or more non-conductive materials between the firstportion of the magnetic core and the second portion of the magnetic coreto form a laminated core for the magnetic core.
 14. The method of claim10, wherein the forming the coupling element comprises: simultaneouslyforming a first portion of the coupling element and the first pluralityof conductors; simultaneously forming a second portion of the couplingelement and the magnetic core, the first portion of the coupling elementand the second portion of the coupling element being physically andelectrically connected; and simultaneously forming a third portion ofthe coupling element and the second plurality of conductors, the secondportion of the coupling element and the third portion of the couplingelement being physically and electrically connected to form the couplingelement.
 15. The method of claim 10, wherein the physically andelectrically connecting comprises: forming a plurality of vias tophysically and electrically connect the first plurality of conductorsand the second plurality of conductors, the plurality of vias, the firstplurality of conductors, and the second plurality of conductors formingthe primary winding of the integrated transformer.
 16. A method forfabricating an integrated transformer, the method comprising: forming amagnetic core along a first direction within a plurality of first layersof a semiconductor stack; forming a first plurality of conductors alonga second direction, orthogonal to the second direction, within a secondlayer of the semiconductor layer stack, the first plurality ofconductors being situated below the magnetic core; forming a secondplurality of conductors along the second direction within a third layerof the semiconductor layer stack, the second plurality of conductorsbeing situated above the magnetic core, wherein the first plurality ofconductors and the second plurality of conductors are included within aprimary winding of the integrated transformer; and forming a couplingelement along the second direction to wrap around the magnetic core toform a secondary winding of the integrated transformer.
 17. The methodof claim 16, wherein the forming the magnetic core comprises: depositingone or more magnetic or ferromagnetic materials within a conductivelayer from among the plurality of first layers; patterning the one ormore conductive materials to form a first portion of the magnetic core;growing one or more non-conductive materials within a non-conductivelayer from among the plurality of first layers; forming one or moretrenches in the one or more non-conductive materials; and depositing theone or more conductive materials within the one or more trenches to forma second portion of the magnetic core.
 18. The method of claim 17,wherein the first portion of the magnetic core is physically andelectrically connected to the second portion of the magnetic core. 19.The method of claim 17, wherein the forming the magnetic core furthercomprises: growing the one or more non-conductive materials between thefirst portion of the magnetic core and the second portion of themagnetic core to form a laminated core for the magnetic core.
 20. Themethod of claim 16, wherein the forming the coupling element comprises:simultaneously forming a first portion of the coupling element and thefirst plurality of conductors; simultaneously forming a second portionof the coupling element and the magnetic core, the first portion of thecoupling element and the second portion of the coupling element beingphysically and electrically connected; and simultaneously forming athird portion of the coupling element and the second plurality ofconductors, the second portion of the coupling element and the thirdportion of the coupling element being physically and electricallyconnected to form the coupling element.